| 摘要 |
<p>A pulley silicide silicon gate and a manufacturing method thereof are provided to adjust the work function arbitrarily by forming the polysilicon layer doped at the upper part of the gate insulating layer. A pulley silicide silicon gate comprises the semiconductor substrate(110), the gate insulating layer(114), the polysilicon layer(116), the first metal layer(118), and the metal silicide layer(124). The element isolation film(112) is formed on the semiconductor substrate. The gate insulating layer is formed on the semiconductor substrate. The polysilicon layer is formed on the top of the gate insulating layer. The first metal layer is formed on the top of the doped polysilicon layer. The metal silicide layer is formed on the top of the first metal layer.</p> |
