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发明名称
Durch LEPECVD und MOCVD auf Silizium hergestellte GaAs/GaAs-Laser
摘要
申请公布号
DE60324425(D1)
申请公布日期
2008.12.11
申请号
DE20036024425
申请日期
2003.09.05
申请人
EPISPEED S.A.
发明人
VON KAENEL, HANS;SAGNES, ISABELLE;SAINT-GIRONS, GUILLAUME JACQUES;BOUCHOULE, SOPHIE
分类号
H01S5/02;H01L21/20;H01L21/205;H01S5/343
主分类号
H01S5/02
代理机构
代理人
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