| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a multilayer wiring structure which is provided with an electrode pad exhibiting high reliability in external electric connection and is formed without increasing the fabrication process. <P>SOLUTION: In the semiconductor device 1, a third wiring layer 5 is formed on a second wiring layer 4. Al interconnections 36 (including barrier films 34, 35, 37) of a predetermined pattern is formed on the third wiring layer 5. The Al interconnections 36 are covered with an interlayer film 38. A surface protection film 39 is laminated on the interlayer film 38. A pad opening 40 is formed in a way that penetrates the surface protection film 39 and the interlayer film 38 in the film thickness direction. A part of the Al interconnections 36 facing the inside of the pad opening 40 is exposed as an electrode pad for external electric connection. <P>COPYRIGHT: (C)2009,JPO&INPIT |
