| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing characteristic deterioration due to the charge trap of an SW nitride film and any adverse effect on the characteristics due to the residual SW oxide film. SOLUTION: A gate oxide film 2 and a gate electrode 3 are formed on an Si substrate 1, and a first side wall (SW) oxide film 4 is formed so as to be brought into contact with the side wall of the gate oxide film 2 and the side wall of the gate electrode 3 by a thermal oxidation method, and a second SW oxide film 5 is built up on the outside by a CVD method, and SW etching is carried out, and a third SW oxide film 6 is formed so that the first SW oxide film 4 and the second SW oxide film 5 can be covered. An SW nitride film 7 is formed on that, and a fourth SW oxide film 8 is formed on that, and SW etching is carried out so that it is possible to form a side wall having a shape whose thickness from the side wall of the gate oxide film 2 is larger, and whose thickness from the side wall of the gate electrode 3 is decreased according as it is separated from the Si substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
|
