| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element where a kink level can be improved. SOLUTION: The semiconductor laser element having two mutually parallel resonator surfaces has a semiconductor substrate 1 of a first conduction-type, a first cladding layer 2 of the first conduction-type formed on a top surface, an active layer 3 formed on the first cladding layer 2, a second clad layer 4 of a second conduction type formed on the active layer 3, a ridge 20 of the second conduction type formed on the second clad layer and extending in a direction orthogonal to the resonator surfaces, a current block layer 22 of the first conduction type formed to fill a step with the ridge, and a contact layer 11 of the second conduction type formed on the ridge and the current block layer where the current block layer has transparent layers 9A and 9B which transmit laser light leaking from the active layer to the current block layer when laser light is generated in the active layer, and the transparent layers are formed thinner in partial regions halfway in the length direction of the ridge than in other areas. COPYRIGHT: (C)2009,JPO&INPIT
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