| 摘要 |
PROBLEM TO BE SOLVED: To provide a bidirectional LIGBT of a three terminals structure which improves insulation of a gate insulating film (concretely thicken the gate insulating film) and improves an element breakdown voltage by forming a buffer layer so as to surround a base layer. SOLUTION: A bidirectional lateral insulated gate bipolar transistor is constituted by including the steps of: forming two n-type buffer layers 2, 10 in a surface layer of an n-type semiconductor layer 1; forming p-type base layers 3, 11 in a surface layer of each of the buffer layers 2, 10; forming p-type contact layers 5, 13 and n-type source layers 4, 12 in surface layers of the p-type base layers 3, 11; forming gate electrodes 8, 15 on front surfaces of the p-type base layers 3, 11 through gate oxide films 6, 14; forming an electrode 9 contacting with the p-type contact layer 5 and the n-type source layer 4, and an electrode 16 contacting with the p-type contact layer 13 and the n-type source layer 12; and connecting the two electrodes 8, 15 to a common gate terminal G. The gate oxide films 6, 14 are made to bear voltages impressed from a terminal T1 or a terminal T2. COPYRIGHT: (C)2009,JPO&INPIT
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