摘要 |
PROBLEM TO BE SOLVED: To properly treat a prescribed range of the periphery of a substrate with precision. SOLUTION: A substrate-treating device 1 for performing treatment, such as, etching and cleaning with respect to the periphery of a substrate (wafer W) comprises a periphery-treating device 4 for treating the periphery of the substrate W, and a substrate holding device 3 for holding the substrate W rotating relative to the periphery-treating device 4. The periphery-treating device 4 comprises a treatment liquid supply section 9 for supplying a treatment liquid to the periphery of the substrate W; and a gas-jetting section 10 for jetting a gas towards the substrate W. The gas-jetting section 10 is provided adjacent, inside the periphery of the substrate W as compared with the treatment liquid supply section 9. Then, the substrate W is rotated relative to the periphery-treating device 4, the treatment liquid is supplied from the treatment liquid supply section 9 to the periphery of the substrate W, and a gas is jetted toward the substrate W from the gas-jetting section 10 provided adjacent in the inside of the substrate W, as compared with the treatment liquid supply section 9, thus treating the periphery of the substrate W. COPYRIGHT: (C)2009,JPO&INPIT
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