发明名称 |
Method and system for controlling copper chemical mechanical polish uniformity |
摘要 |
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
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申请公布号 |
US2008305563(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20070810720 |
申请日期 |
2007.06.07 |
申请人 |
KO FRANCIS;LIN CHUN-HSIEN;WANG JEAN;LAI CHIH-WEI;CHEN PING-HSU;LO HENRY |
发明人 |
KO FRANCIS;LIN CHUN-HSIEN;WANG JEAN;LAI CHIH-WEI;CHEN PING-HSU;LO HENRY |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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