| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a plurality of active elements are laminated and electrodes are formed on the opposite sides, and interference between the active elements is suppressed. <P>SOLUTION: A groove 5 is formed in the first side 1A of a base 1 on which an active element 2 is formed, and a conductive layer 9 is formed in the groove 5 and connected with an electrode 13. The base 1 is thinned from the backside, i.e., the side opposite to the first side 1A, to the bottom 5b of the groove 5 and a wiring portion 40 is formed to penetrate from the first side 1A to the second side 1B on the opposite side. The base 1 is then inverted and the other thinned and diced base substance 21 on which an active element 22 is formed is mounted on the second side 1B, and electrodes 13 and 36 are formed on the wiring portion 40 penetrating the first and second sides 1A and 1B. <P>COPYRIGHT: (C)2009,JPO&INPIT |
