SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable light-emitting device in which open circuit of interconnection does not take place when a semiconductor light-emitting device is fabricated monolithically by forming a plurality of light-emitting portions on one substrate.

SOLUTION: A semiconductor lamination portion laminated to form a light-emitting layer on a substrate is isolated electrically by isolation trenches to form a plurality of light-emitting portions 1. The n-side electrode 20 and the p-side electrode of the plurality of light-emitting portions 1 are connected in series parallel by an interconnection film 3. Some sets of two light-emitting portions 1 connected in parallel with reverse pn relation are further connected in series. The interconnection film 3 for series connection is formed through an insulating film on the isolation trench provided substantially in flush with the surface of the semiconductor lamination portion while holding the isolation trench therebetween. The n-side electrode 20 of one light-emitting portion 1 and the p-side electrode 19 of the other light-emitting portion 1 connected in parallel are connected by the interconnection film 3 provided in a dummy region not contributive to the light-emitting region.

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