| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device for easily and electrically confirming a defective address. <P>SOLUTION: The semiconductor storage device 10 includes an address buffer 12, a row decoder 14, a column decoder 16, a fuse circuit 18, a memory cell array 20, a regulator 22, a sense amplifier 24, a redundancy sense amplifier 26, an amplifier output selecting circuit 28, an input/output buffer 30, and a test mode circuit 32. The sense amplifier 24 and the redundancy sense amplifier 26 are controlled by the test mode circuit 32 so that the level of a signal output when accessed by a normal memory cell is different from the level of a signal output when accessed by a redundant memory cell. Thus, the defective address can be easily and electrically confirmed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
