| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching module which can increase a breakdown voltage while suppressing deterioration of a heat radiation efficiency even when either one of upper and lower surfaces of a semiconductor chip having a switching element formed therein is used as a mounting surface. SOLUTION: A breakdown voltage structure 47 is formed around an emitter electrode 46e of a semiconductor chip 46, conductive spacer 14 is disposed between the semiconductor chip 46 and a copper pattern 12, and the emitter electrode 46e of the semiconductor chip 46 is connected to the copper pattern 12 sequentially via a solder 15, the conductive spacer 14 and a solder 13. COPYRIGHT: (C)2009,JPO&INPIT |
