发明名称 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method capable of realizing the consistent shape when heating and vaporizing a film deposition material, and enhancing the efficiency of the film deposition thereby. SOLUTION: In the film deposition apparatus 1 for depositing a film on a substrate by using plasma beams Pb, the outside diameter of an upper edge 37 of a guide part 31 of a hearth 25 for holding a material rod M is smaller than the outside diameter on a lower end 32 side, and the range A of incidence of the plasma beams Pb is set within an outer circumference of the upper edge 37. As a result, the plasma beams Pb are incident on the upper edge 37 of the guide part 31 in a focused manner, and the temperature of the upper edge 37 of the guide part 31 can be locally raised. In addition, the temperature gradient from the upper edge 37 to the lower end 32 is increased, the range of the temperature for melting the film deposition material is narrowed between the upper edge 37 and the lower end 32, the film deposition material in a molten state is reduced, the shape is stabilized and the film deposition efficiency can be enhanced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008297587(A) 申请公布日期 2008.12.11
申请号 JP20070143983 申请日期 2007.05.30
申请人 SUMITOMO HEAVY IND LTD 发明人 KINOSHITA KIMIO;ITAMI SATORU
分类号 C23C14/32 主分类号 C23C14/32
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