发明名称 |
Through-silicon via interconnection formed with a cap layer |
摘要 |
An integrated circuit structure and methods for forming the same are provided. The method includes providing a substrate; forming a through-silicon via (TSV) opening extending into the substrate; forming an under-bump metallurgy (UBM) in the TSV opening, wherein the UBM extends out of the TSV opening; filling the TSV opening with a metallic material; forming a patterned cap layer on the metallic material; and etching a portion of the UBM outside the TSV opening, wherein the patterned cap layer is used as a mask.
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申请公布号 |
US2008303154(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20070811660 |
申请日期 |
2007.06.11 |
申请人 |
HUANG HON-LIN;SU BOE;TSENG LI-HSIN;CHENG CHIA-JEN;YU HSIU-MEI |
发明人 |
HUANG HON-LIN;SU BOE;TSENG LI-HSIN;CHENG CHIA-JEN;YU HSIU-MEI |
分类号 |
H01L23/528;H01L21/4763 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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