| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element where the depth of diffraction grating can be made even. SOLUTION: The method of manufacturing a semiconductor element equipped with a diffraction grating includes a first step of forming a III-V compound semiconductor layer, a second step of forming a mask by drawing a plurality of patterns for diffraction grating having a cyclic structure arranged to a predetermined direction on the III-V compound semiconductor layer, and a third step of forming the diffraction grating by etching the III-V compound semiconductor layer using a mask as an etching mask. In the second step, a pattern constituting the mask has an end part having greater width in the length direction of the pattern, which is a direction intersecting with the axial direction, than the width of center part in the length direction. COPYRIGHT: (C)2009,JPO&INPIT
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