| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein reliability problem will not occur, and to provide a manufacturing method of the semiconductor device, in a MOS type capacitor wherein the thickness of a capacitor oxide film is 8 nm or smaller. SOLUTION: A capacitance insulating film is formed on the surface of an N-type semiconductor substrate, a P-type semiconductor substrate or an N-type semiconductor layer, while an effective oxide film thickness calculated from a capacitance value per unit area of the oxide film is 8 nm or smaller. A capacitance element is constituted of the capacitance insulating film, an electrode formed on the capacitance insulating film and an N-type impurity layer which is formed, by bringing into contact with the capacitance insulating film and implanting arsenic into the N-type semiconductor layer, and has an impurity concentration higher than that of the N-type semiconductor layer; and the semiconductor device includes such a capacitance element as this in its configuration. COPYRIGHT: (C)2009,JPO&INPIT
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