| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable surface emitting semiconductor laser element without incurring high cost. SOLUTION: A semiconductor laser manufacturing method is provided by which a semiconductor laminate of a plurality of semiconductor layers each including an upper reflecting mirror 7 comprising a plurality of pairs of high-refractive-index layers 7b and low-refractive index layers 7a formed of AlGaAs materials different in the composition of aluminum from each other is etched from the top surface to form a mesa type structure. Then this structure is oxidized to form a current constriction layer 10. Further, the high-refractive-index layers 7b projecting from the side wall of the structure are etched after oxide films on the side wall of the structure are etched. Consequently, the oxide films of the respective refractive-index layers can be removed and the side wall of the structure can be made nearly flat. COPYRIGHT: (C)2009,JPO&INPIT
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