| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor device in which a variation in size in the horizontal direction of a recess can be suppressed and the excellent stability of a breakdown voltage can be obtained. SOLUTION: A photoresist layer 17 having a first opening pattern and an adhesion layer 18 which has a second opening pattern larger than the first opening pattern and is in contact with a compound semiconductor substrate 11 are formed on the compound semiconductor substrate 11. A recess 13 is formed by performing wet etching using the end of the adhesion layer 18 as an ending point in a horizontal direction using the photoresist layer 17 as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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