METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a GaN crystal small in the size of a reversed-polarity crystalline region and low in its density and to provide a GaN crystal substrate. SOLUTION: The method for growing a GaN crystal is one comprising the step of preparing a GaN substrate 10 containing a main crystalline region 11 and a plurality of reversed-polarity crystalline regions 12 reversed in polarity in the [0001] direction with respect to the main crystalline region and the step of growing a GaN crystal 20 by a vapor phase deposition method on the (0001) Ga main face 10g of the GaN substrate 10, wherein the GaN crystal 20 is grown so that it contains a first crystalline region 21 which grows on the main crystalline region 11 and a plurality of second crystalline regions 22 each of which grows on the reversed-polarity region 12, the second crystalline regions 22 are reversed in polarity in the [0001] direction with respect to the first crystalline region 21, and the first crystalline region 21 is higher in a crystal growth rate than the second crystalline regions 22 so as to allow the second crystalline regions 22 to be embedded therein. COPYRIGHT: (C)2009,JPO&INPIT