| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, by which an N-type highly doped single crystal can be stably produced without causing abnormal growth in crystal when the silicon single crystal is grown by a Czochralski method. SOLUTION: When a silicon single crystal is grown from a silicon melt into which an N-type dopant is added by the Czochralski method, the single crystal is grown so as to satisfy a relation expressed by formula (1), wherein C (atoms/cm<SP>3</SP>) is dopant concentration in the silicon melt, Gave (K/mm) is average temperature gradient on growing crystal side, V (mm/min) is pulling speed, and A is coefficient corresponding to the kind of the dopant. The generation of abnormal growth caused by a compositional supercooled phenomenon can be prevented by growing the silicon single crystal in an area on the left side of a critical line G1. COPYRIGHT: (C)2009,JPO&INPIT
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