发明名称 CLOCK AND CONTROL SIGNAL GENERATION FOR HIGH PERFORMANCE MEMORY DEVICES
摘要 Techniques for generating clock and control signals to achieve good performance for read and write operations in memory devices are described. In one design, a clock and control signal generator within a memory device includes first and second clock generators, first and second control signal generators, and a reset circuit. The first clock generator generates a first clock signal used for read and write operations. The second clock generator generates a second clock signal used for write operations. The reset circuit generates at least one reset signal for the first and second clock generators. The reset signal(s) may have timing determined based on loading due to dummy cells. The first control signal generator generates control signals used for read and write operations based on the first clock signal. The second control signal generator generates control signals used for write operations based on the second clock signal.
申请公布号 WO2008151099(A1) 申请公布日期 2008.12.11
申请号 WO2008US65448 申请日期 2008.05.31
申请人 QUALCOMM INCORPORATED;CHEN, ZHIQIN;JUNG, CHANG HO 发明人 CHEN, ZHIQIN;JUNG, CHANG HO
分类号 G11C11/418;G11C7/22;G11C11/419 主分类号 G11C11/418
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