| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device, which comprises the steps of preparing a wiring substrate (11) having a wiring pattern on a surface, bonding a connection terminal of an electronic chip (20), which has a predetermined element and the connection terminal on one surface, to the wiring pattern of the wiring substrate (11) by a flip-chip bonding, forming an insulating film (24) on the wiring substrate (11) to have a film thickness that covers the electronic chip (20), or a film thickness that exposes at least another surface of the electronic chip (20), and reducing a thickness of the electronic chip (20) by grinding said other surface of the electronic chip (20) and the insulating film (24). <IMAGE> |
