| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element avoiding problems, such as the leakage, absorption, heat generation or the like of a light resulting from a sapphire board, while being capable of amply extracting the light generated from a light-emitting layer effectively, and to provide a manufacturing method for the semiconductor light-emitting element. <P>SOLUTION: The semiconductor light-emitting element is constituted of a support board, a semiconductor layer arranged on the support board via at least a first insulating film, a reflecting section formed in the side-face direction of the semiconductor layer and a sealing member coating the semiconductor layer on the support board. In the semiconductor light-emitting element, the top face of the first insulating film is arranged at a location nearer to the support board than to the base of the semiconductor layer on the outer periphery of the semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
