| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve heat radiation characteristics of a semiconductor device having a semiconductor chip having large heating value. <P>SOLUTION: The semiconductor device has a wiring board 7 having a main surface 7a and a reverse surface 7b, a dummy chip 1 which is mounted on the wiring board 7 and made of silicon, a VR chip 2 which is made of silicon and mounted on the dummy chip 1 and has a semiconductor element and a surface electrode formed, a logic chip 3 mounted on the wiring board 7, and a plurality of solder balls 9 provided on the reverse surface 7b of the wiring board 7, where the VR chip 2 is a power supply system chip having large heating value and therefore joined with the dummy chip 1 made of silicon as well to increase the volume and increase the heat capacity, thereby reducing the heat resistance and increasing heat radiation effect. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
