发明名称 INTEGRATED CIRCUIT HAVING VOLTAGE GENERATION CIRCUITRY FOR MEMORY CELL ARRAY, AND METHOD OF OPERATING AND/OR CONTROLLING SAME
摘要 <p>A method of generating a voltage as well as an integrated circuit device having a memory cell array which Includes a plurality of memory cells, wherein each memory cell array including a plurality of memory cells, arranged in a matrix of rows and columns, and a plurality of bit lines, wherein each bit line includes a plurality of memory cells The integrated circuit further Includes voltage generation circuitry, coupled to a plurality of the bit lines, to apply a first voltage to a first group of associated bit lines, and apply a second voltage to a second group of associated bit lines, and generate a third voltage by connecting the first and second groups of associated bit lines, and output the third voltage Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry</p>
申请公布号 WO2008150407(A1) 申请公布日期 2008.12.11
申请号 WO2008US06743 申请日期 2008.05.28
申请人 INNOVATIVE SILICON ISI SA;FISCH, DAVID;BAUSER, PHILIPPE 发明人 FISCH, DAVID;BAUSER, PHILIPPE
分类号 G11C5/14 主分类号 G11C5/14
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