<p>A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal (-ESC) for providing a second force to the wafer. The plasma processing system may also include a first trans-impedance amplifier (TIA) and a second TIA configured to measure a first set of voltages for calculating a value of a positive load current applied to the positive terminal. The plasma processing system may also include a third TIA and a fourth TIA configured to measure a second set of voltages for calculating a value of a negative load current applied to the negative terminal.</p>
申请公布号
WO2008151051(A1)
申请公布日期
2008.12.11
申请号
WO2008US65369
申请日期
2008.05.30
申请人
LAM RESEARCH CORPORATION;JAFARIAN-TEHRANI, SEYED JAFAR;LU, RALPH JAN-PIN