发明名称 |
CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS |
摘要 |
<p>The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.</p> |
申请公布号 |
WO2008150038(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
WO2007KR02783 |
申请日期 |
2007.06.08 |
申请人 |
TECHNO SEMICHEM CO., LTD.;KIM, SEOK-JU;JEONG, EUN-IL;HAN, DEOK-SU;PARK, HYU-BUM |
发明人 |
KIM, SEOK-JU;JEONG, EUN-IL;HAN, DEOK-SU;PARK, HYU-BUM |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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