| 发明名称 |
NANO SCALE WIRES AND RELATED DEVICES |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide nanoscale wires and related devices that are suitable for nano technology, especially for electronics purposes of nanoscale. <P>SOLUTION: A device is used which includes a memory element array having density of at least 10<SP>12</SP>byte/cm<SP>2</SP>. At least one memory element includes an article containing a self-standing bulk-doped semiconductor and the self-standing bulk-doped semiconductor includes at least one part that has the narrowest width of less than 500 nm. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2008300848(A) |
申请公布日期 |
2008.12.11 |
| 申请号 |
JP20080156094 |
申请日期 |
2008.06.16 |
| 申请人 |
PRESIDENT & FELLOWS OF HARVARD COLLEGE |
发明人 |
LIEBER CHARLES M;DUAN XIANGFENG;CUI YI;HUANG YU;GUDIKSEN MARK S;LAUHON LINCOLN J;WANG JIANGFANG;PARK HONG KUN;WEI QUINGQIAU;LIANG WENJIE;SMITH DAVID C;WANG DELI;ZHONG ZHAOHUI |
| 分类号 |
B82B1/00;H01L27/10;C30B11/00;C30B25/00;G01N33/543;G11C13/02;H01L21/205;H01L21/331;H01L21/822;H01L23/532;H01L27/04;H01L27/28;H01L29/06;H01L29/161;H01L29/201;H01L29/207;H01L29/221;H01L29/267;H01L29/66;H01L29/73;H01L29/80;H01L29/88;H01L33/06;H01L51/05;H01L51/30 |
主分类号 |
B82B1/00 |
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