| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field effect transistor which is excellent in transistor characteristics such as field effect mobility and S value and excellent in environmental stability, and also a field effect transistor which has less varying transistor characteristics resulting from the atomic composition ratio of a constituent atom and has a large margin (design flexibility) of the atomic composition ratio. <P>SOLUTION: In the field effect transistor, an active layer in the transistor is made of an amorphous oxide containing In, Zn, N and O, an atomic composition ratio of the N to the N and O in the amorphous oxide is not smaller than 0.01 at.% and not larger than 3 at.%, and Ga is not contained in the oxide. When Ga is contained in the oxide, the number of Ga atoms is set to be smaller than the number of N atoms. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
