| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor using a practical pin photodiode and a charge transfer transistor, and to provide a gate structure of the charge transfer transistor having high charge transfer efficiency, excellent blooming control and low dark current. <P>SOLUTION: The pixel of the image sensor includes a gate insulation film formed on a substrate doped with an impurity of a first conductivity type, a transfer gate formed on the gate insulation film, a photodiode formed inside one substrate of the transfer gate, and a floating diffusion node formed inside the other substrate of the transfer gate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
