| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of suppressing the laser characteristics of the nitride semiconductor laser element from becoming unstable. SOLUTION: The nitride semiconductor laser element 100 comprises a waveguide that extends in a substantially parallel with a [0001] direction of the nitride semiconductor layer; a beam-outgoing surface 12 located at a front-end of the waveguide and comprising an approximate (000-1) surface of the nitride semiconductor layer; and a beam-reflecting surface 13, located at the back-end of the waveguide and comprising an approximate (0001) surface of the nitride semiconductor layer. The intensity of the laser beam emitted from the beam outgoing surface 12 is set larger than that of the laser beam emitted from the beam-reflecting surface 13. COPYRIGHT: (C)2009,JPO&INPIT
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