| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride single crystal such as a GaN single crystal having excellent crystallinity without using a seed crystal substrate in which an expensive GaN thin film is deposited. SOLUTION: In this method, the nitride single crystal is produced by growing a nitride single crystal 8 expressed by chemical formula XN (wherein, X is at least one kind selected from Ga, Al and In) on the surface of a seed crystal substrate 4 by a flux method. In the seed crystal substrate 4, the growth surface used for growing the nitride single crystal 8 is terminated with nitrogen. COPYRIGHT: (C)2009,JPO&INPIT
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