发明名称 |
METAL OXIDE ALLOY LAYER, METHOD OF FORMING THE METAL OXIDE ALLOY LAYER, AND METHODS OF MANUFACTURING A GATE STRUCTURE AND A CAPACITOR INCLUDING THE METAL OXIDE ALLOY LAYER |
摘要 |
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
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申请公布号 |
US2008305591(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080196566 |
申请日期 |
2008.08.22 |
申请人 |
LEE JUNG-HO;CHOI JUNG-SIK;CHO JUN-HYUN;EOM TAE-MIN;LEE JI-HYUN |
发明人 |
LEE JUNG-HO;CHOI JUNG-SIK;CHO JUN-HYUN;EOM TAE-MIN;LEE JI-HYUN |
分类号 |
H01L21/02;H01L21/28 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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