| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and an amplifier, which are capable of being uniformly driven even when a plurality of FET (field effect transistor) cells are arrayed in parallel. <P>SOLUTION: The semiconductor device 40 is equipped with an FET chip 42 having a plurality of FET cells 45 arranged in parallel, a microchip capacitor 43 having a metallic pattern 53 as a conductive unit arranged with a gap with respect to the FET chip 42 and a plurality of bonding wires 62 for connecting a plurality of FET cells 45 to a microchip capacitor 43 while, in this case, the conductive connection bodies 62a-62t are arranged in parallel so that the configuration, material and connecting positions thereof are not uniform. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
