| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a replacing method of its defective block in which a time required for defective block replacing sequence can be shortened. <P>SOLUTION: A defective block automatic replacing sequence control circuit 200 has a first defective block memory circuit 201, a second defective block memory circuit 202, a first logical circuit 203, a second logical circuit 204, a third logical circuit 205, an addition circuit 206, a comparing circuit 207, an address counter 208, a counter control circuit 209, and a control circuit 210, in the defective block automatic replacing sequence, the control circuit 200 controls replacing operation between a defective block FBLK and a redundant block RBLK. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
