| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the erroneous writing to a memory cell MC0 caused by an excessive boost voltage of a channel in a NAND type flash memory. <P>SOLUTION: For example, when "1" is written in a memory cell MC, to precharge the channel, the select gate transistor SGD-Tr of a drain side is turned ON by a potential Vsg from a row control circuit. Simultaneously, the select gate transistor SGS-Tr of a source side is turned ON by a potential Vsg from the row control circuit to precharge the potential of the channel. Then, the potential of the channel is boosted by applying a potential Vpass from the row control circuit to wordlines WL1 to SL3 and a potential Vpgm to a wordline WLO. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
