| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory unit capable of suppressing writing or erasure disturbance. SOLUTION: In the nonvolatile memory unit having a memory cell array formed by arranging memory cells using variable resistance elements storing electrically rewritable resistance values as data in a nonvolatile manner, a first data latch holding writing or erasing data to a prescribed memory cell group and a second data latch holding reference data used upon writing or erasure to the prescribed memory cell group, selective writing or erasure operation to the prescribed memory cell group is performed based on the data of the first data latch and compensation operation to writing or erasure disturbance accompanying the writing or erasure operation is performed based on the reference data of the second data latch. COPYRIGHT: (C)2009,JPO&INPIT |
