FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor with a low on-state resistance and high breakdown voltage, and provide a method for manufacturing the field-effect transistor. SOLUTION: A field-effect transistor has an MOS structure and comprises a nitride compound semiconductor. The field-effect transistor is provided with: a substrate with a buffer layer formed on the surface; a field alleviating layer that is formed on the buffer layer by epitaxial growth and has a predetermined conductivity type; a semiconductor layer that is formed in a part of region on the field alleviating layer and has a conductivity type opposite from a predetermined conductivity type; a contact layer that is formed in or on the surface of the semiconductor layer and has the same conductivity type as the predetermined conductivity type; a source electrode formed on the contact layer; a drain electrode formed on the field alleviating layer; a gate insulating film formed to overlap with the end face of the semiconductor layer on the semiconductor layer; and a gate electrode formed to overlap with the end face of the semiconductor layer on the gate insulating film. A channel that is formed in the vicinity of the end face of the semiconductor layer and the field alleviating layer are electrically connected to each other. COPYRIGHT: (C)2009,JPO&INPIT