| 摘要 |
PROBLEM TO BE SOLVED: To provide a simpler film formation method of a substrate. SOLUTION: In the film formation method of the substrate 30, when an SiO<SB>2</SB>film 38 is formed on the substrate 30, the area S<SB>1</SB>of high etching resistance and the area S<SB>2</SB>of low etching resistance are formed so as to be along the uneven patterns of the patterning part 14 of an electrode plate 10. Thus, by executing prescribed etching treatment to the substrate 30 after forming the SiO<SB>2</SB>film 38, the SiO<SB>2</SB>film 38 patterned similarly to the uneven pattern is obtained. Thus, in such a film formation method, the need of an apparatus and a process for a photolithography technique is eliminated, and the SiO<SB>2</SB>film 38 is formed more easily than conventional one. COPYRIGHT: (C)2009,JPO&INPIT
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