| 摘要 |
PROBLEM TO BE SOLVED: To properly treat a prescribed range of the periphery of a substrate with precision. SOLUTION: A substrate-treating device 1 for performing treatment, such as, etching and cleaning with respect to the periphery of a substrate (wafer W) comprises a periphery-treating device 4 for treating the periphery of the substrate W, and a substrate-holding device 3 for holding the substrate W rotating relative to the periphery-treating device 4. The periphery-treating device 4 comprises: a treatment liquid supply section 9 for supplying a treatment liquid to the periphery of the substrate W; and a gas-jetting section 10 for jetting a gas toward the substrate W. A treatment liquid storage chamber 11 for dipping the substrate W into a stored treatment liquid is formed at the treatment liquid supply section 9, while being extended along the rotating direction. The gas-jetting section 10 is provided adjacent in the inside of the periphery of the substrate W, as compared with the treatment liquid storage chamber 11. COPYRIGHT: (C)2009,JPO&INPIT
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