| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which subjects a plurality of substrates to be treated to plasma treatment. SOLUTION: The semiconductor manufacturing apparatus includes a substrate holder which holds a number of tiers of substrates in a treatment vessel, a treatment gas feeder, a plasma generating chamber 10 which communicates with the treatment vessel through a plurality of diffusers 12, a plasma generating gas feeder, a plasma generator which supplies high-frequency currents to a pair of electrodes 22 and 22 disposed outside the plasma generating chamber 10, a turning device which turns the substrate holder, and a depressurizing/exhausting device which depressurizes and exhausts the treatment vessel and the plasma generating chamber. Plasma is generated in the plasma generating chamber 10 as the substrate holder is turned, and the generated plasma is fed through the diffusers 12 between substrates to apply plasma treatment to the substrate. COPYRIGHT: (C)2009,JPO&INPIT
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