COMPOUND SEMICONDUCTOR FILM, LIGHT EMITTING FILM, AND MANUFACTURING METHOD THEREOF

摘要

Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2-Zn-IV-S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.