DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

摘要

A doping apparatus (4) is provided with a first dopant storing section (41), a second dopant storing section (42) and a guide section (43). The first dopant storing section has an opening section (413A) at an upper portion and stores a first dopant (D1) that gasifies in the vicinity of a surface of a semiconductor melt. The dopant storing section is provided with a dopant holding section (422), which holds a second dopant (D2) that liquefies in the vicinity of the surface of the semiconductor melt and has a communication hole (422A) formed for permitting the liquefied dopant to flow downward; and a guide tube (421), which is arranged on a lower portion of the dopant holding section (422) and guides the liquefied dopant flowed out from the communication hole (422A) to the surface of the semiconductor melt. The guide section is composed of a cylindrical body (431) with an opened lower end and a closed upper end, stores the first dopant storing section (41) and the second dopant storing section (42) and guides the liquefied dopant gas of the first dopant to the surface of the semiconductor melt.