SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To attain improvement in light emission output and improvement in durability by reducing absorption of light due to a pad electrode and preventing destruction caused by concentration of currents to a transparent conductive layer just under the pad electrode.

SOLUTION: The present invention relates to a semiconductor light emitting element comprising: a first conductivity type semiconductor layer; a light emitting layer formed in at least a part of an upper surface of the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light emitting layer; an insulating layer formed in at least a part of an upper surface of the second conductivity type semiconductor layer; a light-transmitting conductive film partially formed via the insulating layer approximately all over the upper surface of the second conductivity type semiconductor layer; and a pad electrode formed via the light-transmitting conductive film on the insulating layer. The semiconductor light emitting element is characterized in including a reflecting layer for reflecting light from the light emitting layer between the insulating layer and the second conductivity type semiconductor layer.

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