| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ZnO whisker film and its preparation method. <P>SOLUTION: This ZnO whisker film is a whisker film formed on a substrate, mainly (not less than 50% mole ratio) composed of ZnO crystal, being an accumulated film of whisker-formed particle with an aspect ratio of not less than 2, and having a nano structure combining a high specific surface area and a high electric conductivity. In this preparation method, a ZnO crystal is precipitated on a substrate, by regulating feed concentration, temperature and/or pH in a reaction solution in which ZnO is precipitated, to form a ZnO whisker film. Electronic device material using the ZnO whisker film is also disclosed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
