发明名称 RESIST REMOVING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND RESIST REMOVING DEVICE
摘要 PROBLEM TO BE SOLVED: To practically and rationally remove resist whose surface has deteriorated from a substrate by a resist removing method and a device that use no chemicals to less affect environments. SOLUTION: The resist removing device 10 which removes resist 2 comprising a deteriorated layer 2a and an undeteriorated layer 2b from a substrate 1 performs a stage wherein resist removal is carried out by bringing radicals, produced by plasma-processing nitrogen, oxygen, hydrogen, steam, or mixed gas thereof under reduced pressure, into contact with the substrate 1, and a stage wherein resist removal is carried out by bringing ozone water into contact with the substrate 1. In the resist removal stage using the radicals, the majority of the undeteriorated layer 2b is left by controlling the contact time of the radicals according to formation conditions of the deteriorated layer 2a on the resist surface. Alternatively, the majority of the undeteriorated layer 2b is left by performing process control according to an analysis result of reaction gas discharged during the resist removal. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008300704(A) 申请公布日期 2008.12.11
申请号 JP20070146396 申请日期 2007.06.01
申请人 SHARP CORP;AQUA SCIENCE KK 发明人 YAMAMOTO HIROAKI;MINAMIBOUNOKI TAKASHI;MASUOKA SHINJI;NINOMIYA HIROKI;SAITO TERUO;YAMASE MASAO;MORIHIRA KYOTA
分类号 H01L21/3065;H01L21/027 主分类号 H01L21/3065
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