发明名称 |
METHODS OF FORMING DEVICES INCLUDING DIFFERENT GATE INSULATING LAYERS ON PMOS/NMOS REGIONS |
摘要 |
Provided is a method of manufacturing a semiconductor device, in which the thickness of a gate insulating layer of a CMOS device can be controlled. The method can include selectively injecting fluorine (F) into a first region on a substrate and avoiding injecting the fluorine (F) into a second region on the substrate. A first gate insulating layer is formed of oxynitride layers on the first and second regions to have first and second thicknesses, respectively, where the first thickness is less than the second thickness. A second gate insulating layer is formed on the first gate insulating layer and a gate electrode pattern is formed on the second gate insulating layer.
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申请公布号 |
US2008305620(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080130646 |
申请日期 |
2008.05.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HYUN SANG-JIN;CHOI SI-YOUNG;JEOM IN-SANG;NAM GAB-JIN;KANG SANG-BOM;HONG SUG-HUN |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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