发明名称 Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same
摘要 A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
申请公布号 US2008302760(A1) 申请公布日期 2008.12.11
申请号 US20080149388 申请日期 2008.04.30
申请人 PARK DONG-GUN;KIM DONG-WON;LEE SUNG-YOUNG;CHOI YANG-KYU;KIM CHANG-HOON;KIM JU-HYUN 发明人 PARK DONG-GUN;KIM DONG-WON;LEE SUNG-YOUNG;CHOI YANG-KYU;KIM CHANG-HOON;KIM JU-HYUN
分类号 C23F1/00 主分类号 C23F1/00
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