SELF-ALIGNED SPLIT GATE MEMORY CELL AND METHOD OF FORMING

摘要

A method of forming a split gate memory device using a semiconductor layer includes patterning an insulating layer to leave a pillar thereof. A gate dielectric is formed over the semiconductor layer. A charge storage layer is formed over the gate dielectric and along first and second sides of the pillar. A gate material layer is formed over the gate dielectric and pillar. An etch is performed to leave a first portion of the gate material laterally adjacent to a first side of the pillar and over a first portion of the charge storage layer that is over the gate dielectric to function as a control gate of the memory device and a second portion of the gate material laterally adjacent to a second side of the pillar and over a second portion of the charge storage layer that is over the gate dielectric to function as a select gate.