发明名称 |
MEMORY STRUCTURE AND METHOD OF MAKING THE SAME |
摘要 |
A memory structure disclosed in the present invention features a control gate and floating gates being positioned in recessed trenches. A method of fabricating the memory structure includes the steps of first providing a substrate having a first recessed trench. Then, a first gate dielectric layer is formed on the first recessed trench. A first conductive layer is formed on the first gate dielectric layer. After that, the first conductive layer is etched to form a spacer which functions as a floating gate on a sidewall of the first recessed trench. A second recessed trench is formed in a bottom of the first recessed trench. An inter-gate dielectric layer is formed on a surface of the spacer, a sidewall and a bottom of the second recessed trench. A second conductive layer formed to fill up the first and the second recessed trench.
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申请公布号 |
US2008305593(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20070949786 |
申请日期 |
2007.12.04 |
申请人 |
HSIAO CHING-NAN;LEE PEI-ING;CHANG MING-CHENG;HUANG CHUNG-LIN;CHANG HSI-HUA;WU CHIH-HSIANG |
发明人 |
HSIAO CHING-NAN;LEE PEI-ING;CHANG MING-CHENG;HUANG CHUNG-LIN;CHANG HSI-HUA;WU CHIH-HSIANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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